---
res:
  bibo_abstract:
  - In this paper a research process to verify thermal management for double-sided
    cooled SiC-power semiconductors will be discussed. In the context of previous
    researches a high performance cooling system for these semiconductors was developed.
    In many cases, prototypes of power semiconductors are used in research projects.
    This often leads to the fact that only small numbers are available or that they
    are not available right from the start. Close cooperation with semiconductor manufacturers,
    like Infineon Technologies AG in this case, within these projects offers the opportunity
    to get information about the internal structure of the semiconductors and their
    packages. This information, the use of special PCB manufacturing methods, as well
    as thermal simulation are used to build up a heat source that mimics the semiconductor
    including the package and thus gives us the opportunity to verify the performance
    of our thermal management for high integrated power electronics.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Simon
      foaf_name: Cepin, Simon
      foaf_surname: Cepin
      foaf_workInfoHomepage: http://www.librecat.org/personId=52080
  - foaf_Person:
      foaf_givenName: Holger
      foaf_name: Borcherding, Holger
      foaf_surname: Borcherding
      foaf_workInfoHomepage: http://www.librecat.org/personId=1693
  bibo_doi: 10.30420/566091341
  dct_date: 2023^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/978-3-8007-6091-6
  dct_language: eng
  dct_publisher: VDE@
  dct_title: Development of Heat Source for Performance Verification of Thermal Management
    for Double-Sided Cooled SiC-Power Semi-conductors@
...